PART |
Description |
Maker |
HY5V66GF HY5V66GF-H HY5V66GF-P |
SDRAM - 64Mb 4 Banks x 1M x 16Bit Synchronous DRAM 4Mx16|3.3V|4K|H|SDR SDRAM - 64M x16 SDRAM x16内存
|
Hynix Semiconductor TT electronics Semelab, Ltd.
|
HY57V56820BT HY57V56820BLT-S HY57V56820BT-S HY57V5 |
32Mx8|3.3V|8K|K|SDR SDRAM - 256M SDRAM|4X8MX8|CMOS|TSOP|54PIN|PLASTIC 4 Banks X 8M X 8Bit Synchronous DRAM SDRAM - 256Mb
|
Hynix Semiconductor
|
IBM0325404CT3A-75A IBM03254B4CT3A-75A IBM0325804CT |
x16 SDRAM x8 SDRAM x8 SDRAM内存 x4 SDRAM Module x4内存模块
|
Electronic Theatre Controls, Inc. Hanbit Electronics Co., Ltd.
|
HYM72V32736BLT8-K HYM72V32736BT8-K HYM72V32736BT8- |
SDRAM|32MX72|CMOS|DIMM|168PIN|PLASTIC SDRAM - Unbuffered DIMM 256MB x64 SDRAM Module
|
Hynix Semiconductor
|
IBM13N8734HCB-260T IBM13N8734HCC-260T IBM13N8644HC |
x72 SDRAM Module x64 SDRAM Module 8M x 64 One-Bank Unbuffered SDRAM Module(8M x 64 1组不带缓冲同步动态RAM模块) 8米64单银行无缓冲内存模组米64一组不带缓冲同步动态内存模块)
|
International Business Machines, Corp.
|
UPD4516161G5-A15-7JF UPD4516421G5-A15-7JF UPD45168 |
x4 SDRAM x8 SDRAM x16 SDRAM x16内存
|
Mitsubishi Electric, Corp.
|
HYS72D64020GU HYS64D64020GU |
2.5 V 186-pin Unbuffered DDR-I SDRAM Modules(2.5 V 184脚、寄存型512MDDR-I SDRAM 模块)
|
SIEMENS AG
|
K4X56163PE-LG K4X56163PE-LFG |
16M x16 Mobile DDR SDRAM 1,600 x16移动DDR SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K4S161622H |
16Mb H-die SDRAM Specification IC,SDRAM,2X512KX16,CMOS,TSOP,50PIN,PLASTIC
|
Samsung semiconductor
|
GMM2649233EFTG |
8Mx64 Bits PC100/PC133 Sdram Unbuffered Dimm Based on 8Mx8 Sdram With Lvttl
|
Hynix Semiconductor
|
W946432AD W946432A |
SDRAM 2Mx32 512K X 4 BANKS X 32 BITS DDR SDRAM
|
Winbond Electronics WINBOND[Winbond]
|
K4S560832A K4S560832A-TC_L1H K4S560832A-TC_L1L K4S |
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL IC,SDRAM,4X8MX8,CMOS,TSOP,54PIN,PLASTIC
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|